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目前,分形的研究已成为国内外普遍关注的问题.对于金属/半导体二元薄膜体系,在金属诱导非晶半导体晶化的过程中,常常出现雪花状的分形结构.见诸文献的有关报道,多为没有化合物生成的金属、半导体共晶系统,例如Au/a-Ge(Si),Ag/a-Ge(Si)和Al/a-Ge(Si)等等.对于有化合物生成的金属/半导体薄膜体系,这种研究报道很少.段建中等曾在Pd/a-Si中发现了分形,分形出现的同时有多种硅化物产生.对于分形形成的机制,已建立了若干模型,其中扩散限制聚集(DLA)模型是很成功的,但DLA模型难以解释金属/半导体二元薄膜体系中分形的成因.吴自勤教授等根据薄膜体系中分形晶化的微观结构观测,提出了由温度场控制的随机逐次成核(RSN)模型,在解释薄膜的分形晶化时十分令人满意.为
At present, the fractal research has become a widespread concern at home and abroad.For the metal / semiconductor binary thin film system, the snow-like fractal structure often appears in the process of metal-induced amorphous semiconductor crystallization.Related reports in the literature, Many are metal-free semiconductor eutectic systems such as Au / a-Ge (Si), Ag / a-Ge (Si) and Al / a-Ge (Si), etc. For compound- Semiconductor thin film system, this study has reported very little.Duan Jianzhong and other found in the Pd / a-Si fractal, fractal appears at the same time a variety of silicide generation.For the mechanism of fractal formation, has established a number of models, including DLA model is very successful, but DLA model is difficult to explain the cause of fractal in metal / semiconductor binary thin film system.According to the microstructure observation of fractal crystallization in thin film system, Professor Wu Zqin et al. (RSN) model, which is very satisfactory in explaining the fractal crystallization of films