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用固定能量为２０ｋｅＶ，剂量为１０１１～１０１３／ｃｍ ２ 的质子和固定剂量为１×１０１１／ｃｍ ２，能量为３０～１００ｋｅＶ 的质子，对ＧａＡｓ／ＡｌＧａＡｓ 多量子阱材料进行辐照，得到了材料的光致发光特性随质子能量和剂量的变化关系，并进行了讨论．结果表明，质子辐照对材料的光学性质有破坏性的影响，这种影响是通过两种机制引起的．相同能量的质子辐照，随着辐照剂量的增大，对量子阱光致发光峰的破坏增大．相同剂量的质子辐照，当辐照质子的射程刚好覆盖整个量子阱结构区域时，对量子阱光致发光峰的破坏最严重，当辐照质子的射程超过量子阱结构区域时，对量子阱光致发光峰的破坏反而减小．
The GaAs / AlGaAs MQW material was irradiated with a proton with a fixed energy of 20 keV and a dose of 1011-1013 / cm 2 and a proton with a fixed dose of 1 × 10 11 / cm 2 and an energy of 30-100 keV to obtain a material The photoluminescence characteristics of proton energy and dose changes, and are discussed. The results show that proton irradiation has a devastating effect on the optical properties of the material, and this effect is caused by two mechanisms. With the same energy proton irradiation, with the increase of irradiation dose, the damage of photoluminescence peak of quantum well increases. The same dose of proton irradiation, when the irradiation proton range just cover the entire quantum well structure region, the quantum well photoluminescence peak of the most serious damage, when the irradiated proton range exceeds the quantum well structure region, the quantum well The photoluminescence peak damage decreases instead.