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本文通过对晶闸管关断物理过程的分析得到:n基区深中心的最佳剖面分布应是N_t(j_2)>N_t(j_1)。经过实验,根据DLTS和电特性参数的测量、分析的结果可知,硼、磷扩散浓度和金掺杂总量都会改变n基区的金分布,且不同的金分布相应于不同V_T～t_q。折衷曲线。所以,快速晶闸管n基区金浓度的最佳分布,应当有相应的最佳V_T～t_q折衷曲线,它依赖于硼、磷、金扩散的最佳配合。
Through the analysis of the thyristor turn-off physical process, we find that the best profile distribution in deep base of n-base should be N_t (j_2)> N_t (j_1). According to the results of the measurement and analysis of the DLTS and the electrical characteristic parameters, it is found that the distribution of boron and phosphorus and the total amount of gold doping change the gold distribution in the n base region, and different gold distributions correspond to different V_T ~ t_q. Eclectic curve. Therefore, the optimal distribution of the n-site gold concentration of the thyristor should have the corresponding optimal V_T ~ t_q tradeoff curve, which depends on the optimal coordination of boron, phosphorus and gold diffusion.