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用射频等离子体化学气相沉积法（ RFCVD）和 CH4、 N2与 Ar组成的混合气体制备掺氮类 金刚石薄膜（ a－ C:H:N）。用原子力显微镜（ AFM），俄歇电子能谱（ AES），红外光谱（ IR）以及显 微拉曼谱（ Micro－ Raman）对 a－ C:H:N薄膜的表面形貌、组分和微观结构进行了表征。实验结 果表明，薄膜中有纳米量级的颗粒存在，而且随反应气体中 N2与 CH4比值的增大， 薄膜中氮元 素的含量也随之增大，并主要以 C－ N键和 N－ H键形式存在，少量以 C≡ N键形式存在。还研 究了热退火对 a－ C:H:N薄膜的电导率的影响。
A nitrogen doped diamond thin film (a- C: H: N) was prepared by radio frequency plasma chemical vapor deposition (RFCVD) and a mixture of CH4, N2 and Ar. The surface morphology, composition and microstructure of a-C: H: N thin films were characterized by atomic force microscopy (AFM), Auger electron spectroscopy (AES), infrared spectroscopy (IR) and micro Raman The structure was characterized. The experimental results show that there are nano-sized particles in the film, and with the increase of the ratio of N2 to CH4 in the reaction gas, the content of nitrogen element in the film also increases, mainly with C- N bond and N- Key exists, a small amount of C≡ N bond exists. The effect of thermal annealing on the conductivity of a-C: H: N thin films was also investigated.