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We propose a simple method to calculate the spectrum of spontaneous terahertz (THz) emission from hot carriers in two-dimensional semiconductors by means of transport quantities, which are easily obtained during the process of solving the transport problem using the recently developed balance-equation approach for THz-driven transport. The method has been applied to examine the surface emission from a GaAs/AlGaAs heterojunction and the edge emission from a GaAs-based multiple quantum-well system subjected to strong dc biases. The theoretical results obtained are in reasonably good agreement with measurements.