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引言 随着半导体集成电路的发展及对多晶硅研究的深入,在硅衬底上选择性生长单多晶硅的工艺日趋成熟,其应用也已越出了隔离技术而深入其它领域。硅衬底上单多晶硅的选择性生长是指在硅衬底的指定区域生产单晶硅,而在其余区域则生长多晶硅。通常以SiH_4或SiCl_4作源,采用常压CVD或低压CVD技术进行。一九八○年上半年,我们曾将我所602组采用SiH_4制作的单多晶硅选择性生长片成功地应用于集成注入逻辑新结构的研制,有关这一工
INTRODUCTION With the development of semiconductor integrated circuits and their in-depth study of polycrystalline silicon, the process of selectively growing single-polycrystalline silicon on silicon substrates has become more sophisticated. Its application has also surpassed other technologies in isolation. The selective growth of single polysilicon on a silicon substrate means that monocrystalline silicon is produced in a given area of the silicon substrate and polysilicon is grown in the remaining area. Usually SiH_4 or SiCl_4 as a source, the use of atmospheric pressure CVD or low pressure CVD technology. In the first half of 1980, we successfully applied our 602 group of single polycrystalline silicon selective growth chips made of SiH_4 to the development of a new structure of integrated injection logic.