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CeO-2 films have been grown on biaxially textured Ni substrates at various temperatures. The results show that CeO-2 films without IBAD are dominated by (111) orientation from room temperature to 800℃ while the preferential orientation of CeO-2 films with IBAD is (001) at lower deposition temperature and (111) at deposition temperature higher than 450℃. CeO-2 films with better in_plane texture and out_of_plane orientation can be grown at 360℃ with 240 eV ion energy and 200 μA/cm+2 ion current density.
CeO - 2 films have been grown on biaxially textured Ni substrates at various temperatures. The results show that CeO - 2 films without IBAD are dominated by (111) orientation from room temperature to 800 ° C while the preferential orientation of CeO -2 Films with IBAD is (001) at lower deposition temperature and (111) at deposition temperature higher than 450 ° C. CeO - 2 films with better in_plane texture and out_of_plane orientation can be grown at 360 ° C with 240 eV ion energy and 200 μA / cm + 2 ion current density.