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Vishay推出一款低导通电阻的新型20 V P沟道功率MOSFETSiB457EDK。新型SiB457EDK采用了TrenchFET Gen III P沟道技术,该技术利用自对准工艺制程,在每平方英寸的硅片上装进了十亿个晶体管单元。
Vishay Introduces SiB457EDK, a New 20 V P-Channel Power MOSFET with Low On-Resistance. The new SiB457EDK uses the TrenchFET Gen III P-channel technology, which uses a self-aligned process to add billions of transistor cells per square inch of silicon.