论文部分内容阅读
用液相外延法可以制备出绿色场致发光磷化镓二极管。在密闭坩埚中装入Ga-GaP熔体,再将它放入垂直炉中。将GaP衬底片插入温度保持在约1110—1140℃的熔体中。从S、Se和Te中选择一种杂质加入熔体,然后缓慢地把温度冷到约1070—1100℃,就可形成n—型GaP薄层。此时用受主杂质(例如Zn或Cd)加入熔体进行反型掺杂,而制得p—型层。然后把衬底拉出熔体使之冷却到周围的温度。为降低串联电阻,对片子的衬底这边可进行磨薄,然后就可制备场致发光二极管。切割或解理下来的小片,分别在它的p侧和n侧制上Au—Zn和Au—Sn合金点。 用上述方法制备的绿色发光二极管的效率约为2.7×10~(-4),如把反反射环氧树脂帽加于二极管则效率可提高二倍以上。二极管可用作平面指示器。
Green-emitting phosphorescent gallium phosphide can be prepared by liquid-phase epitaxy. The closed crucible was filled with Ga-GaP melt and placed in a vertical furnace. The GaP substrate sheet was inserted into the melt maintained at a temperature of about 1110-1140 ° C. An n-type GaP thin layer can be formed by selecting an impurity from S, Se and Te to be added to the melt, and slowly cooling the temperature to about 1070 to 1100 ° C. In this case, acceptor impurities (for example, Zn or Cd) are added to the melt for inversion doping to form a p-type layer. The substrate is then pulled out of the melt and allowed to cool to ambient temperature. In order to reduce the series resistance, the substrate side of the film can be thinned, and then an electroluminescent diode can be prepared. Cut or cleave down the small pieces, respectively, in its p-side and n-side Au-Zn and Au-Sn alloy points. The efficiency of the green light-emitting diode prepared by the above method is about 2.7 × 10 -4. If the anti-reflective epoxy cap is added to the diode, the efficiency can be more than doubled. Diode can be used as a flat indicator.