High sensitivity Hall devices with AlSb/InAs quantum well structures

• 作 者: 张杨 张雨溦 王成艳 关敏 崔利杰 李弋洋 王宝强 朱战平 曾一平
• 机 构: Key Laboratory of Semiconductor Materials Science,Chinese Academy of Sciences,Material Science Cente
• 出 处: Chinese Physics B
• 发表日期: 2013年05期
• 关键词: epitaxy markedly roughness FWHM attractive quickly attributed diffractometer cry

AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm2·V-1·s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.

AlSb / InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb / InAs channel. It is found that the electron mobility as high as 19050 cm2 · V-1 · s-1 has been achieved for an InAs channel of 22.5 nm. InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films.