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AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL).An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed,and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K.We demonstrated that these behaviors are caused by a change in the carder dynamics with increasing temperature due to the competition of carders’ localization and delocalization in the AlGaN alloy.