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本文用4×104Ci(1Ci=3.7×1010Bq)的60Co源(剂量率2×105rad(Si)/h)对GaN基InGaN/GaN多量子阱蓝光LED进行5种剂量的γ射线的辐照实验.通过辐照前后蓝光LED的波长、色纯度、最大半峰宽(FWHM)和电流-电压(I-V)、电流-光通量(I-F)等电光学特性分析,得到γ射线对GaN基LED器件的辐照效应.结果发现,辐照后LED器件的发光一致性和均匀性变差,在20mA工作电流下,最大剂量下器件发光强度衰减近90%,光通量衰减约40%,并得到器件的抗辐照能力的参数τ0Kγ为4.039×10-7rad.s-1,发现较低的正向偏压下(小于2.6V)器件的饱和电流随辐照总剂量增大而增大.
In this paper, a 5-dose γ-ray irradiation experiment was carried out on a GaN-based InGaN / GaN MQW Blue LED with a 4 × 104Ci (1Ci = 3.7 × 1010Bq) 60Co source at a dose rate of 2 × 10 5 rad (Si) / h. The effects of γ-ray irradiation on the GaN-based LED devices were obtained by analyzing the electro-optical properties of the blue LED, including the wavelength, color purity, FWHM, IV and IF. The results show that the uniformity and uniformity of the emitted light of the LED device after irradiation are deteriorated. Under the current of 20mA, the luminous intensity of the device decays by nearly 90% and the luminous flux decays by about 40% at the maximum dose, Capability parameter τ0Kγ is 4.039 × 10-7 rad.s-1, and it is found that the saturation current of devices with lower forward voltage (less than 2.6V) increases with the increase of the total radiation dose.