The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction tran
The NisoNb2o films were prepared by ion beam assisted deposition (IBAD)with various Ar+ ion energies. A phase evolution of fcc→amorphous→Ni+Nb→Ni+hcp was obs