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在探明耿二极管工作失效原因的同时,为了找出获得高可靠性二极管的筛选条件,把用同一制作过程制成的9组140个 K 波段耿二极管进行了14000小时的工作寿命试验。其结果用威伯尔图表示时,可以清楚地划分为形状参数 m=0.25的1000小时内的初期失效期和1000小时后的 m=1.0的偶然失效期。在到达失效的过程中,器件参数表示出恶化的失效模型出现在工作试验的初期,其余都是在本质上不属于恶化倾向的短路失效。失效比例在各组间有很大差异,已推断出它与材料特性、二极管特性相对应的短路失效是由于有源层厚度和杂质分布不恰当引起的电场击穿所导致的。如果把所获得的这些结果作为选择二极管的标准来剔除失效器件时,则可望获得失效率在880×10~(-9)以下的耿二极管。
In order to find out the reason for the failure of Geng diode work, in order to find out the screening conditions for obtaining high reliability diodes, 14 KHGs of 140 K-band diodes made from the same production process were subjected to a 14,000-hour working life test. The results, in terms of Weibull plots, are clearly divided into an initial failure period of 1000 hours with a shape parameter of m = 0.25 and an occasional failure period of m = 1.0 after 1000 hours. In the event of failure, the failure modes that the device parameters show are exacerbated appear early in the job trial, and the rest are short-circuit failures that are not inherently prone to deterioration. The failure rates vary widely across groups and it has been concluded that the short-circuit failure that corresponds to material properties and diode characteristics is due to breakdown of the electric field due to inappropriate thickness and impurity distribution of the active layer. If these results obtained are used as the criteria for selecting diodes to eliminate a failed device, it is expected to obtain a GDN with a failure rate below 880 × 10 -9.