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通过理论计算对用于量子阱红外探测器的GaAs/AlxGa1-xAs量子阱能级结构进行模拟设计 ,将不同生长结构的量子阱材料的光响应谱和光致荧光谱 (PL)与计算结果进行比较 .说明量子阱生长结构与量子阱能级结构的关系 .欲使量子阱红外探测器的响应峰值在 8μm附近 ,则需量子阱结构中阱宽为 4 7nm ,垒中Al含量为 0 2 9.理论计算与测试结果符合得较好 .
The energy level structures of GaAs / AlxGa1-xAs quantum wells for quantum well infrared detectors were simulated by theoretical calculations. The light response spectra and PL spectra of quantum well materials with different growth structures were compared with the calculated ones The relationship between the quantum well structure and the energy level structure of the quantum well is shown in Figure 1. The quantum well structure has a well width of 47 nm and an Al content of 0 2 9 in order to make the response peak of the quantum well infrared detector be around 8 μm. The theoretical calculation is in good agreement with the test results.