,Single-event effects induced by medium-energy protons in 28 nm system-on-chip

• 作 者: Wei-Tao Yang Qian Yin Yang Li Gang Guo Yong-Hong Li Chao-Hui He Yan-Wen Zhang Fu-Qiang Zhang Jin-Hua Han
• 机 构: School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China“,”National
• 出 处: 核技术（英文版）
• 发表日期: 2019年10期
• 关键词: Single-event effect Proton System-on-chip

Single-event effects (SEEs) induced by medium-energy protons in a 28 nm system-on-chip (SoC) were investigated at the China Institute of Atomic Energy. An on-chip memory block was irradiated with 90 MeV and 70 MeV protons, respectively. Single-bit upset and multi-cell upset events were observed, and an uppermost number of nine upset cells were discovered in the 90 MeV proton irradiation test. The results indicate that the SEE sensitiv-ities of the 28 nm SoC to the 90 MeV and 70 MeV protons were similar. Cosmic Ray Effects on Micro-Electronics Monte Carlo simulations were analyzed, and it demon-strates that protons can induce effects in a 28 nm SoC if their energies are greater than 1.4 MeV and that the lowest correspondinglinearenergytransferwas 0.142 MeV cm2 mg-1. The similarities and discrepancies of the SEEs induced by the 90 MeV and 70 MeV protons were analyzed.