,Calculations of two dimensional electron gas distributions in AIGaN/GaN material system

• 作 者: Guo Bao-Zeng Gong Na Yu Fu-Qiang
• 机 构: College of Electronic and Informational Engineering,Hebei University,Baoding 071002,China“,”College
• 出 处: 中国物理B（英文版）
• 发表日期: 2008年1期
• 关键词: GaN heterojunction exchange-correlation potential two-dimensional electron gas

This paper presents calculating results of the two-dimeusional electron gas (2DEG) distributions in A1GaN/GaN material system by solving the Schr(o)dinger and Poisson equations self-consistently.Due to high 2DEG density in the A1GaN/GaN heterojunction interface,the exchange correlation potential should be considered among the potential energy item of Schr6dinger equation. Analysis of the exchange correlation potential is given.The dependencies of the conduction band edge,2DEG density on the A1 mole fraction are presented.The polarization fields have strong influence on 2DEG density in the A1GaN/GaN heterojunction,so the dependency of the conduction band edge on the polarization is also given.