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在分析大脑神经元细胞的工作原理基础上，得出了在人工神经网络中的神经元器件应具有的特点，并介绍了硅基铁电薄膜神经元器件的模型及原理。该器件利用铁电薄膜具有随外加脉冲电压而改变的自极化状态，来调制半导体表面的电阻，以达到不同状态输出的目的。
Based on the analysis of the working principle of neuronal cells in the brain, the characteristics of the neuron devices in the artificial neural network are obtained. The models and principles of the neuron devices based on the silicon-based ferroelectric thin films are also introduced. The device uses the ferroelectric film has a self-polarization state changes with the impulse voltage to modulate the resistance of the semiconductor surface, in order to achieve the purpose of different state output.