集成注入逻辑工艺技术

• 作 者: 李世兴
• 出 处: 微电子学
• 发表日期: 2004年期
• 关键词: 双极集成电路 集成注入逻辑 大规模集成电路 低功耗性 基区 外延层 集电极 集成度 晶体管 电流增益

采用新型的逻辑结构,将高集成度,低功耗性能带给双极集成电路的I~2L,因其逻辑电路的通用性,被公认为是有发展前途的双极大规模集成电路之一。但是“将一般的双极集成电路工艺原封不动的采用,就可以轻易地获得予期的特性”,这种期望无论如何看来为时过早。

Using a new logic structure, I ~ 2L, which brings high levels of integration and low power consumption to bipolar integrated circuits, is recognized as one of the promising bipolar large scale integrated circuits because of the versatility of its logic circuits . However, it seems premature to expect that the “general idea of ​​a bipolar integrated circuit (IC) process can be easily obtained for the expected performance”.