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采用软件理论分析的方法对选择性p型掺杂量子阱垒层在InGaN双波长发光二极管(LED)中的光谱调控作用进行模拟分析.分析结果表明,选择性P型掺杂对量子阱中电子和空穴浓度分布的均衡性起到一定的调控作用,在适当选择p型掺杂量子阱垒层层数的条件下,能够改善量子阱中载流子的辐射复合速率,降低溢出电子浓度,从而有效提高芯片内量子效率,并减缓内量子效率随驱动电流增大而快速下降的趋势.随着活性层量子阱增加到特定数量,选择性P型掺杂的调控效果更加明显,LED芯片的双波长发光峰强度达到基本均衡.
The theoretical analysis of the software was used to simulate the spectral modulation of the selective p-type quantum well barrier in InGaN dual-wavelength light-emitting diode (LED). The results show that the selective P-type doping And hole concentration distribution play a regulatory role in the appropriate choice of p-type doped quantum well barrier under the conditions of layers can improve the quantum well in the carrier recombination rate of radiation to reduce the overflow electron concentration, Thus effectively increasing the quantum efficiency of the chip and slowing down the rapid decrease of the internal quantum efficiency with the increase of the driving current.With the increase of the quantum well of the active layer to a certain amount, the selective control of the P-type doping is more obvious, Dual-wavelength peak intensity reached a basic equilibrium.