论文部分内容阅读
本文研究了在常压外延系统中,利用 SiCl_4/H_2/Br_2体系在SiO_2上外延横向生长(ELO)单晶硅技术.比较了Br_2和HCl对硅的腐蚀速率,发现前者对娃的腐蚀速率约比后者慢一个数量级,指出Br_2的引入有着重要意义.给出了Br_2和H_2对Si和SiO_2的腐蚀速率曲线,讨论了外延横向生长速率对SOI结构的材料表面形貌的影响.在该 SOI膜上制造了 MOS/SOI器件,其N沟最大电子迁移率为360cm~2/V.s(沟道掺杂浓度为 1×10~(16)/cm~3),源-漏截止电流为 9.4×10~(-10)A/μm.
In this paper, the epitaxial lateral growth (ELO) single crystal silicon technology using SiCl 4 / H 2 / Br 2 system in atmospheric pressure epitaxy system is studied.The corrosion rate of silicon by Br 2 and HCl is compared, Which is an order of magnitude slower than the latter, pointing out that the introduction of Br 2 is of great significance. The curves of the etching rates of Si and SiO 2 by Br 2 and H 2 are given and the effect of epitaxial lateral growth rate on the surface morphology of the SOI structure is discussed. The MOS / SOI device is fabricated on the film with a maximum electron mobility of 360cm ~ 2 / Vs (channel doping concentration of 1 × 10 ~ (16) / cm ~ 3) and a source-drain cutoff of 9.4 × 10 ~ (-10) A / μm.