Pressure effect study on the Ⅰ-Ⅴ property of the GaAs-based resonant tunnelling structure by photolu

• 作 者: 李秋柱 王楷群 菅傲群 刘鑫 张斌珍
• 机 构: National Key Laboratory for Electronic Measurement Technology,North University of China,Key Laborato
• 出 处: Chinese Physics B
• 发表日期: 2010年04期
• 关键词: resonant compressive micrometer uniaxial apparent helix imposed splitting lumine

This paper discusses the Ⅰ-Ⅴ property of the GaAs-based resonant tunnelling structure(RTS) under external uniaxial pressure by photoluminescence studies.Compressive pressure parallel to the [110] direction,whose value is determined by Hooke’s law,is imposed on the sample by a helix micrometer.With the increase of the applied external uniaxial compressive pressure,the blue shift and splitting of the luminescence peaks were observed,which have some influence on the I-V curve of RTS from the point of view of the energy gap,and the splitting became more apparent with applied pressure.Full width at half maximum broadening could also be observed.

This paper discusses the Ⅰ-Ⅴ property of the GaAs-based resonant tunneling structure (RTS) under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke’s law, is imposed on the sample by a helix micrometer. Due the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the IV curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.