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逆F类功放在接近饱和区工作时效率很高,将其与Doherty功放结构相结合,可以实现一种在大功率回退的情况下仍然具有很高效率的射频功率放大器。本文设计了一款基于Ga N HEMT晶体管的高效率的逆F类Doherty功率放大器,工作频带为910MHz~950MHz。单音信号测试结果显示,在930MHz处,功放回退7.5d B后漏极效率仍高达64.2%。使用3载波WCDMA信号作为测试信号,利用数字预失真技术进行线性化后,功放输出信号的上下边带邻信道功率比(ACPR)分别为-35.39d Bc和-35.9d Bc。
Inverting Class F amplifiers are highly efficient when operating near saturation and combining them with Doherty power amplifier architectures provides a very efficient RF power amplifier with high power back-off. In this paper, a Ga N HEMT transistor-based high-efficiency reverse F-type Doherty power amplifier, the operating frequency band of 910MHz ~ 950MHz. The single-tone signal test results show that the drain efficiency is still as high as 64.2% at 930MHz after the amplifier is backed off by 7.5dB. Using the 3-carrier WCDMA signal as the test signal and using the digital predistortion technique for linearization, the upper and lower sideband adjacent channel power ratio (ACPR) of the power amplifier output signals are -35.39 dBc and -35.9 dBc, respectively.