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提出用 CMOS源极跟随缓冲电路以较少的电路段数快速驱动大电容负载 .HSPICE模拟结果表明 ,在负载电容为基本栅电容的 10 0倍及 6 0 0 0倍时 ,CMOS源极跟随缓冲电路具有高于多段倒相器缓冲电路的负载驱动能力 ,且占有面积小 .从而较好地解决了高速驱动芯片内各种数据传输及外部负载的问题 .该电路结构简单 ,易于实现 ,且制作工艺与标准 CMOS工艺完全兼容 .
Proposed using CMOS source follower snubber circuit to fast drive large capacitive load with fewer circuit segments.HSPICE simulation results show that the load capacitance of the basic gate capacitance of 10 0 times and 600 times the CMOS source follower snubber circuit Has higher than the multi-stage inverter buffer circuit load driving capability, and possession of a small area.Therefore, a high-speed drive chip to solve a variety of data transmission and external load problems.The circuit is simple and easy to implement, and the production process Fully compatible with standard CMOS process.