论文部分内容阅读
本文报道了用常压金属有机化学气相沉积（ＡＰＭＯＣＶＤ）法在Ｓｉ衬底上制备高质量的钛酸钡铁电薄膜。钡的β二酮螯合物［Ｂａ（ＤＰＭ）２］和异丙氧基钛（ＴＩＰ）作为金属有机源，在衬底温度为７０００Ｃ时，在Ｓｉ（１００）衬底上生长的钛酸钡薄膜是多晶膜，表面光滑、平整。经快速退火（Ｔ＝７５００Ｃ）后，薄膜具有完全的［００１］取向，其介电常数（ε）为１０７。研究了衬底温度与薄膜的结晶性和取向性的关系；讨论了半导体衬底对钛酸钡铁电薄膜物理性质的影响；得到了薄膜的剩余自发极化强度（Ｐｒ）为２０μＣ／ｃｍ２，矫顽电场（Ｅｃ）为４０ＫＶ／ｃｍ。
This paper reports the preparation of high-quality barium titanate ferroelectric thin films on Si substrates by atmospheric pressure metal-organic chemical vapor deposition (APMOCVD). Barium β-diketonate chelate [Ba (DPM) 2] and titanium isopropoxide (TIP) were used as the metal organic source to grow titanic acid on a Si (100) substrate at a substrate temperature of 7000C Barium film is polycrystalline film, the surface is smooth, flat. After rapid annealing (T = 7500C), the film has a complete [001] orientation with a dielectric constant (ε) of 107. The relationship between the substrate temperature and the crystallinity and orientation of the films was investigated. The influence of the semiconductor substrate on the physical properties of the barium titanate ferroelectric thin films was discussed. The residual spontaneous polarization (Pr) of the films was found to be 2.0 μC / cm2, coercive electric field (Ec) is 4 0KV / cm.