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利用可饱和吸收半导体GaAs作为被动调Q元件和F P输出耦合镜 ,实现了半导体激光器 (LD)抽运Nd :YVO4激光调Q运转 ,获得脉宽度为 4 7ns,重复频率为 1183kHz,平均功率为 4 30mW ,光束质量为M2 =1 13的TEM0 0 激光基横模输出 ,调Q抽运阈值为 170 0mW .并数值求解了含有GaAs被动调Q兼输出耦合的速率方程 ,分析了GaAs被动调Q机理以及脉宽宽度、重复频率、平均功率随抽运速率、腔长的变化关系 ,理论与实验结果相一致 .为多功能综合型微型调Q固体激光器提供了简单有效的方法 .
By using saturable absorbing GaAs as passive Q-switched element and FP output coupling mirror, the laser diode (LD) pumping Nd: YVO4 laser Q-switched operation is realized. The pulse width is 47 ns and the repetition frequency is 1183 kHz. The average power is 4 30mW, beam quality of M2 = 1 13 TEM0 0 laser-based transverse mode output, the Q-pumping threshold is 170 0mW. The rate equation of GaAs passive Q-switched and output coupling is solved numerically, Mechanism and pulse width, repetition frequency and average power with the pumping rate and cavity length, the theory and experimental results are consistent, which provides a simple and effective method for the multifunctional integrated micro-Q-switched Q-switched solid state laser.