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将能量为150KeV、剂量为10~(14)～17~(17)/cm~2的砷离子注入(100)P型单晶硅,用～1.8MeV的He~+束对注入砷的单晶硅进行背散射测量。讨论不同剂量和不同退火条件对砷在硅中浓度分布的影响。结果表明:R_P值随注入剂量的增加而逐渐减少,当剂量>5×10~6离子/cm~2时,变化更为显著。当热退火温度低于950℃时,砷的分布改变不明显,温度>1000℃时,分布曲线便偏离高斯分布。
Arsenic ions (100) P-type single crystal silicon with energy 150KeV and dose 10 ~ (14) ~ 17 ~ (17) / cm ~ 2 were implanted into the arsenic single crystal with ~ Silicon backscatter measurements. The effects of different dosages and different annealing conditions on the concentration distribution of arsenic in silicon were discussed. The results showed that the R_P value decreased with the increase of injection dose, and the change was more significant when the dosage was> 5 × 10 ~ 6 ions / cm ~ 2. When the thermal annealing temperature is lower than 950 ℃, the distribution of arsenic does not change obviously. When the temperature is higher than 1000 ℃, the distribution curve deviates from the Gaussian distribution.