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在宽范围偏置条件下,测量了GaAlAs红外发光二极管(IRLED)的低频噪声,发现1/f噪声幅值与偏置电流的γ次方成正比,在小电流区,γ≈1,在大电流区γ≈2.基于载流子数涨落和迁移率涨落机制建立了一个GaAlAsIRLED1/f噪声模型,该模型的分析表明,低电流区GaAlAsIRLED的1/f噪声源于体陷阱对载流子俘获和发射导致的扩散电流涨落,高电流区的1/f噪声源于结空间电荷区附近氧化层陷阱对该处表面势的调制而引起载流子表面复合速率的涨落.该研究结果为1/f噪声表征GaAlAsIRLED的可靠性提供了实验基础与理论依据.
Under a wide range of bias conditions, the low frequency noise of the GaAlAs infrared LED (IRLED) was measured and the amplitude of the 1 / f noise was found to be proportional to the y-th power of the bias current. In the low current region, γ≈1, Current region γ≈2. A GaAlAsIRLED1 / f noise model was built based on the fluctuation of carrier number and mobility. The analysis of this model shows that the 1 / f noise of GaAlAsIRLED in low current region originates from the body-trap-to- The diffusion current caused by sub-capture and emission fluctuation fluctuates. The 1 / f noise in the high-current region originates from the modulation of the surface potential by the oxide layer trap near the junction space charge region, resulting in the fluctuation of recombination rate at the carrier surface. The results provide the experimental basis and theoretical basis for the reliability of 1 / f noise characterization GaAlAsIRLED.