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采用RFMBE技术,在蓝宝石衬底上生长了高Al组分势垒层AlGaN/GaNHEMT结构.用三晶X射线衍射分析得到AlGaN势垒层的Al组分约为43%,异质结构晶体质量较高,界面比较光滑.变温霍尔测量显示此结构具有良好的电学性能,室温时电子迁移率和电子浓度分别高达1246cm2/(V·s)和1.429×1013cm-2,二者的乘积为1.8×1016V-1·s-1.用此材料研制的器件,直流特性得到了提高,最大漏极输出电流为1.0A/mm,非本征跨导为218mS/mm.结果表明,提高AlGaN势垒层Al的组分有助于提高AlGaN/GaNHEMT结构材料的电学性能和器件性能.
The AlGaN / GaNHEMT structure with high Al composition was grown on the sapphire substrate by RFMBE technique.The Al composition of the AlGaN barrier layer was about 43% by three-crystal X-ray diffraction analysis, High and the interface is smooth.When the temperature is measured by the Hall effect, the structure has good electrical properties, the electron mobility and the electron concentration are up to 1246cm2 / (V · s) and 1.429 × 1013cm-2 respectively at room temperature, the product of the two is 1.8 × 1016V-1 · s-1. The DC characteristics of the device fabricated with this material have been improved with a maximum drain current of 1.0 A / mm and an extrinsic transconductance of 218 mS / mm. The results show that increasing the AlGaN barrier layer The composition of Al helps improve the electrical and device performance of AlGaN / GaNHEMT structural materials.