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采用电子束蒸发的方法在２００℃抛光的氮化铝（ＡｌＮ）陶瓷衬底上淀积２００ｎｍ的Ｃｒ膜，并在高真空中退火。利用ＭＣｓ＋－ＳＩＭＳ技术（在Ｃｓ＋一次离子轰击下检测ＭＣｓ＋型二次离子）对样品进行了深度剖析，给出了界面组分分布随退火温度与时间的变化关系。结果表明，ＭＣｓ＋－ＳＩＭＳ技术是研究金属－陶瓷界面扩散与反应的有效方法。
A 200 nm Cr film was deposited on a 200 ° C polished aluminum nitride (AlN) ceramic substrate by electron beam evaporation and annealed in a high vacuum. The samples were deeply analyzed by MCs + -SIMS (detecting MCs + type secondary ions under Cs + primary ion bombardment), and the relationship between the distribution of interface components and the annealing temperature and time was given. The results show that MCs + -SIMS technology is an effective method to study the diffusion and reaction of metal-ceramic interface.