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采用分子自组装成膜技术,在磁头表面制备了1H,1H,2H,2H-全氟癸烷基三乙氧基硅烷(FTE)自组装膜。使用时间飞行二次离子质谱仪(TOF-S IM S)、X射线光电子能谱仪(XPS)、原子力显微镜(AFM)和接触角测量仪对FTE自组装膜进行了表征。XPS测得的FTE自组装膜C 1s谱图中有分谱出现在287.905 eV位置,这证明FTE分子以C—O—S i键与磁头表面结合。通过分析TOF-S IM S测量的不同反应时间的膜厚和其对应的AFM表面形貌图发现,FTE自组装膜形成过程分为表面亚单层膜低覆盖、表面亚单层膜中等覆盖、团聚和聚结4个阶段。实验结果表明,控制反应时间可以在磁头表面制备超薄平整的FTE自组装膜,膜厚为(1.20±0.01)nm,表面粗糙度小于0.2 nm。该层超薄膜使磁头对水的接触角增加到110.5°±0.1,°令磁头的疏水性能得到很大提高,进而较大幅度地提高了磁头表面的抗污染能力。
1H, 1H, 2H, 2H-perfluorodecyltriethoxysilane (FTE) self-assembled films were prepared on the surface of the magnetic heads by molecular self-assembly technique. FTE self-assembled membranes were characterized by time-of-flight secondary ion mass spectrometry (TOF-S IM S), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and contact angle measurement. XPS measured FTE self-assembled film C 1s spectrum in the spectrum appears at 287.905 eV position, which proves FTE molecules C-O-Si bond with the head surface. By analyzing the film thickness of different reaction time and its corresponding AFM surface topography measured by TOF-S IM S, it was found that the formation process of FTE self-assembled films is divided into surface sub-monolayer film low coverage, surface sub-monolayer film medium coverage, Reunion and coalescence of four stages. The experimental results show that the controllable reaction time can fabricate an ultrathin flat FTE self-assembled monolayer on the magnetic head with a film thickness of (1.20 ± 0.01) nm and a surface roughness of less than 0.2 nm. This layer of ultra-thin film to the head of the water contact angle increased to 110.5 ° ± 0.1 °, so that the hydrophobic properties of the head has been greatly improved, and thus greatly improve the head surface of the anti-pollution ability.