论文部分内容阅读
利用高温高压合成的立方氮化硼单晶材料 ,采用恒浓度高温扩散方法制备 n型立方氮化硼半导体材料 .通过化学气相沉积方法在 n型立方氮化硼上外延生长 p型金刚石薄膜 .在此基础上 ,通过欧姆接触电极的制作 ,制备出金刚石薄膜 /立方氮化硼异质 pn结 ,并给出 pn结的伏安特性曲线 .
An n-type cubic boron nitride semiconductor material is prepared by using a high-temperature and high-pressure cubic boron nitride single crystal material synthesized by high temperature and high pressure, and a p-type diamond thin film is epitaxially grown on the n-type cubic boron nitride by a chemical vapor deposition Based on this, the diamond / CBN heterostructure pn junction was prepared by the fabrication of ohmic contact electrode, and the volt-ampere characteristic curve of pn junction was given.