论文部分内容阅读
系统研究了射频和甚高频下沉积微晶硅薄膜时沉积参数对薄膜质量的影响,并优化了沉积参数.在相同的沉积条件下,甚高频沉积速度明显大于射频沉积速度,并且制备出的太阳能电池效率同样高于射频沉积.一般情况下,当沉积速率提高时,沉积薄膜中存在大量悬挂键和Si-2H键等缺陷,会大大降低材料的光电性能,同样也会降低太阳能电池的效率.在保证材料的光电性能的前提下提高沉积速度,沉积参数需要优化.在系列优化沉积参数后,微晶硅沉积速率达到0.75nm/s,在该沉积速率下,制备出的单结n-i-p结构的太阳能电池效率达到5.41%.
The effects of deposition parameters on the film quality at RF and very low frequency deposition of microcrystalline silicon films were systematically studied and the deposition parameters were optimized.Under the same deposition conditions, the deposition rate of VHF was significantly higher than that of RF deposition and the Of the solar cell efficiency is also higher than the RF deposition.Generally, when the deposition rate is increased, there are a large number of dangling bonds and Si-2H bonds in the deposited film defects, will greatly reduce the photoelectric properties of the material, will also reduce the solar cell Efficiency.It is necessary to optimize the deposition parameters to improve the deposition rate under the premise of ensuring the photoelectric properties of the material.After the series of optimized deposition parameters, the deposition rate of microcrystalline silicon reaches 0.75nm / s, at this deposition rate, the single junction nip The structure of the solar cell efficiency of 5.41%.