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美国Aethercomm公司开发出采用SiC技术的一种新的高功率宽带放大器。SiC基放大器的性能比GaAs、LDMOS和VDMOS放大器的要好。SiC器件的最大结温为225℃,这就可使放大器基板温度达到850℃,同时不降低有源器件的平均无故障工作时间(MTBF)。SiC放大器的效率比其它常规放大器的要高,在倍频程带宽内,其效率比GaAs、LDMOS和VDMOS放大器平均要高出 10-15%。SiC放大器输出三阶截取点(OIP3)要高3-5 dB,线性化不提高。
Aethercomm, Inc., USA, has developed a new high-power broadband amplifier using SiC technology. SiC-based amplifiers perform better than GaAs, LDMOS, and VDMOS amplifiers. The maximum junction temperature of SiC devices is 225 ° C, which allows the amplifier substrate temperature to reach 850 ° C without reducing MTBF for active devices. SiC amplifiers are more efficient than other conventional amplifiers and have an average efficiency of 10-15% more than GaAs, LDMOS, and VDMOS amplifiers in octave bandwidth. SiC amplifier output third-order intercept point (OIP3) 3-5 dB higher, linearization does not increase.