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亚波长尺度光子晶体结构可有效提升发光二极管(LED)的光提取效率(LEE),然而在制造过程中会存在缺陷或无序.利用时域有限差分法对理想方形光子晶体结构进行了优化,在此基础上对三种无序光子晶体结构进行了仿真,研究了光子晶体结构参数的无序变化对GaN基蓝光LEDLEE的影响.结果表明,光子晶体空气孔位置和半径的无序变化使优化的80nm光子晶体LED的LEE下降,而可使非优化的60nm光子晶体LED的LEE增加;当光子晶体空气孔位置和半径的无序变化量从0到±20nm之间变化时,LEE最大会产生53.8%的浮动;光子晶体刻蚀深度的无序变化对LEE影响较小,一般可以忽略.研究结果为高性能蓝光光子晶体LED的设计制作提供了重要的理论参考.
The subwavelength scale photonic crystal structure can effectively improve the light extraction efficiency (LEE) of the light emitting diode (LED), however, there are defects or disorder in the manufacturing process.The ideal square photonic crystal structure is optimized by the finite difference time domain method, Based on this, the three kinds of disordered photonic crystal structures were simulated, and the effect of disordered changes of the photonic crystal structure parameters on the GaN-based blue LEDLEE was studied. The results show that the disorder and change of the positions and radii of the photonic crystals’ Of the 80nm photonic crystal LED LEE decreased, while non-optimized 60nm photonic crystal LED LEE increased; when the photonic crystal air hole position and radius of the disorder change from 0 to ± 20nm, the maximum will produce LEE 53.8%. The disorder of photonic crystal etching depth has little effect on LEE, and can generally be neglected.The research results provide an important theoretical reference for the design and fabrication of high performance blue photonic crystal LED.