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通过合金化改性技术,Ge可由间接带隙半导体转变为直接带隙半导体.改性后的Ge半导体可同时应用于光子器件和电子器件,极具发展潜力.基于直接带隙Ge1-x Sn x半导体合金8带Kronig-Penny模型,重点研究了其导带有效状态密度、价带有效状态密度及本征载流子浓度,旨在为直接带隙改性Ge半导体物理的理解及相关器件的研究设计提供有价值的参考.研究结果表明:直接带隙Ge1-x Sn x合金导带有效状态密度随着Sn组分x的增加而明显减小,价带有效状态密度几乎不随Sn组分变化.与体Ge半导体相比,直接带隙Ge1-x Sn x合金导带有效状态密度、价带有效状态密度分别低两个和一个数量级;直接带隙Ge1-x Sn x合金本征载流子浓度随着Sn组分的增加而增加,比体Ge半导体高一个数量级以上.
Ge can be transformed from indirect band gap semiconductors to direct band gap semiconductors by alloying modification technology.The modified Ge semiconductors have great potential for application in both photonic devices and electronic devices.Based on the direct band gap Ge1-xSnx Semiconductor alloy 8 with Kronig-Penny model, focusing on its conduction band effective state density, valence band effective state density and intrinsic carrier concentration, designed to direct bandgap modified Ge semiconductor physics understanding and related devices The results show that the effective state density of the direct bandgap Ge1-xSnx conduction band decreases with the increase of the Sn content x, and the valence band effective density hardly changes with the Sn composition. Compared with bulk Ge semiconductors, the direct bandgap Ge1-xSnx alloy has lower effective state density and lower valence band effective state density of two orders and one order of magnitude, respectively. The direct bandgap Ge1-xSnx alloy intrinsic carrier concentration Increases with the increase of Sn composition, more than an order of magnitude higher than bulk Ge semiconductors.