A new static induction thyristor with high forward blocking voltage and excellent switching performa

• 作 者: 张彩珍 王永顺 刘春娟 汪再兴
• 机 构: School of Electronic and Information Engineering,Lanzhou Jiaotong University,
• 出 处: 半导体学报
• 发表日期: 2010年03期
• 关键词: thyristor switching blocking anode emitter buried fabrication leakage induction

A new static induction thyristor(SITH) with a strip anode region and p~-buffer layer structure(SAP~-B) has been successfully designed and fabricated.This structure is composed of a p~-buffer layer and lightly doped n~- regions embedded in the p~+-emitter.Compared with the conventional structure of a buried-gate with a diffused source region(DSR buried-gate),besides the simple fabrication process,the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V,the blocking gain increased from 40 to 70,and the turn-off time decreased from 0.8 to 0.4μs.

A new static induction thyristor (SITH) with a strip anode region and p ~ -buffer layer structure (SAP ~ -B) has been successfully designed and fabricated. This structure is composed of ap ~ buffer layer and lightly doped n- ~ regions embedded in the p ~ + -emitter. Compared to the conventional structure of a buried-gate with a diffused source region (DSR buried-gate), besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-off time decreased from 0.8 to 0.4 μs.