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本文用RBS,AES,TEM和X射线衍射等实验方法,分析比较了Ni/Si,Pt/Si,Ir/Si系统在室温下As离子混合和热退火的行为.得出在Ni/Si系统中,硅混合量Q_(s1)与剂量Φ的平方根成正比,形成Ni_2Si相.在Pt/Si系中,硅混合量也与剂量的平方根成正比,先后形成Pt_3Si和Pt_2Si相.对Ir/Si系,Q_(s1)与Φ则是线性关系:Q_(s1)=aΦ+b,未测到化学相.实验表明:离子束混合能大大增强金属和硅化物的化学反应.在离子混合和退火形成硅化物的过程中,注入杂质As的分布有显著变化.
In this paper, the behavior of As ion mixing and thermal annealing at room temperature of Ni / Si, Pt / Si and Ir / Si systems was analyzed and compared by means of RBS, AES, TEM and XRD. , The mixing amount of silicon Q_ (s1) is proportional to the square root of the dose Φ, forming the Ni_2Si phase.In the Pt / Si system, the mixing amount of silicon is also proportional to the square root of the dose, and Pt_3Si and Pt_2Si phases are formed successively. , Q_ (s1) and Φ are linear: Q_ (s1) = aΦ + b, no chemical phase is detected.The experimental results show that ion beam mixing can greatly enhance the chemical reaction between metal and silicide.In ion mixing and annealing In the silicide process, the distribution of impurity As changes significantly.