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本文主要研究了锌、氮离子注入 GaAs1-xPx提高发光效率的机理.从锌在GaAs1-xPx中的剖面看出,在p-n结附近锌的浓度比较低,结果降低了发光层中沉积的锌原子对光的吸收.在77K的温度下,从阴极荧光光谱可以看出氮在GaAs1-xPx中已经形成了等电子陷阱.用锌、氮离子注入制作的发光二极
In this paper, the mechanism of GaAs1-xPx implanted into ZnAs and GaAs1-xPx to improve the luminescent efficiency is studied.The zinc concentration in the GaAs1-xPx is lower than that in the vicinity of the pn junction, resulting in a decrease of the zinc atoms deposited in the luminescent layer The absorption of light At the temperature of 77K, it can be seen from the cathode fluorescence spectrum that nitrogen has formed an isoelectric trap in GaAs1-xPx.