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本文采用柠檬酸-H_2O_2-H_2O体系的电化学腐蚀法,对高阻GaAs衬底材料的选择腐蚀进行了研究.考察了电解液组分、腐蚀时间、电流密度对腐蚀速率的影响,井用扫描电镜法对腐蚀后的表面进行了观察.研究结果表明,该法能获得具有底部平坦表面平正的窗孔.通过简单的法拉第分析可以认为,当用电化学腐蚀时,通电的作用能使表面平正,但GaAs的溶解可能主要靠化学反应.
In this paper, the electrochemical etching of citric acid-H 2 O 2 -H 2 O system was used to study the selective etching of high-resistance GaAs substrate.Effects of electrolyte composition, etching time and current density on the corrosion rate were investigated, Electron microscopy of the surface after corrosion was observed.The results show that the method can be obtained with a flat surface at the bottom of a flat window.From a simple Faraday analysis can be considered, when using electrochemical corrosion, the role of electricity can make the surface smooth , But the dissolution of GaAs may mainly rely on chemical reactions.