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引言目前很多实验室正在研究单管存储单元和采用这种单元的硅片。在最近一次会议上的这方面的文章列于参考资料[1]～[5]。要想评价目前的进展,那就必须采用类似于逻辑电路测量延迟-功率乘积的这种方法来进行比较。为此,就提出了单元设计的品质因数和读出/再生放大器的品质因数。本文要讨论各种单元设计的原理。采用最佳设计的一种单元已经制成,并对这个制成单元的特性作了研究。还为1密耳~2的存储单元做成了以选通触发器原理为基础的读出/再生放大器。这种触发
Introduction Many laboratories are currently studying single-tube memory cells and silicon using such cells. Articles in this area at the most recent meeting are listed in references [1] ~ [5]. To evaluate the current progress, then this method must be similar to logic to measure the delay - power product for comparison. For this reason, the quality factor of the cell design and the quality factor of the readout / regenerative amplifier are proposed. This article discusses the principles of various cell designs. A unit with the best design has been made and the properties of the unit made have been studied. Also for the 1 mil ~ 2 memory cells made strobe trigger principle based readout / regenerative amplifier. This trigger