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The inductively coupled plasma chemical vapor deposition(ICP-CVD)deposited silicon nitride(SiNx)thin film was evaluated for its application as the electrical insulating film for a capacitor device.In order to achieve highest possible dielectric strength of SiNx,the process parameters of ICP-CVD were carefully tuned to control hydrogen in SiNx films by means of tuning N2/SiH4 ratio and radio frequency(RF)power.Besides electrical measurements,the hydrogen content in the films was measured by dynamic secondary ion mass spectrometry(D-SIMS).Fourier transform infrared spectroscopy(FTIR)and micro Raman spectroscopy were used to characterize the SiNx films by measuring Si-H and N-H bonds'intensities.It was found that the more Si-H bonds lead to the higher dielectric strength.