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本文除介绍MOCVD的基本反应过程及装置外,将重点讨论用MOCVD生长各种Ⅲ-Ⅴ族半导体的工艺过程、生长参数等,并将介绍用MOCVD方法制成的一些新结构、器件及其性能。
In addition to introducing the basic MOCVD reaction process and devices, this article will focus on the MOCVD growth of various III-V semiconductor process, growth parameters, etc., and will introduce some new MOCVD structure made of the device and its performance .