论文部分内容阅读
通过把100毫巴的氮和0.05毫巴的氨的混合气体导入生长管内的办法,使合成溶质扩散(SSD)生长的晶体的氮浓度达到3×10~(17)cm~(-3)。用锌扩散法已经制出这种材料的绿色发光二极管,获得了高达0.01%的量子效率,和商品的气相外延二极管性能相近。除绿峰外,一些SSD二极管在700nm处还有个谱峰,该峰是由氧的污染所引起的,严格地处理反应管,可以减少氧沾污。
The concentration of nitrogen in the crystal grown by the synthetic solute diffusion (SSD) was 3 × 10 ~ (17) cm -3 by introducing a mixed gas of 100 mbar of nitrogen and 0.05 mbar of ammonia into the growth tube. The green LED with this material has been fabricated using the zinc diffusion method, achieving quantum efficiencies of up to 0.01%, similar to those of commercially available vapor-phase epitaxy diodes. In addition to the green peak, some SSD diodes have a peak at 700 nm, which is caused by oxygen contamination. Strict handling of the reaction tube reduces oxygen contamination.