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文中主要研究了 12 0keV的N+ 注入后SiC薄膜样品的光致发光谱 (PL)和傅立叶红外光谱(FTIR)特性 .从红外光谱可以看到有明显得碳氮单键、双键、三键等新结构生成 .从PL光谱则发现 36 5nm处的发光峰明显增强 ,这表明N+ 注入使得带隙中深的能级辐射中心复合的效率大幅度提高
In this paper, the photoluminescence (PL) and Fourier transform infrared (FTIR) properties of SiC films after N + implantation at 120 keV have been investigated. From the infrared spectra, it can be seen that there are obvious carbon-nitrogen single bonds, double bonds and triple bonds The new structure was generated.From the PL spectra, the luminescence peak at 36 5nm was found to be significantly enhanced, indicating that the N + implantation greatly enhanced the efficiency of deep energy level radiation center recombination in the bandgap