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高能（Ｍｅｖ）Ａｓ￣＋离子注入硅｛１１３｝缺陷的ＨＲＥＭ研究朱健民，李齐，蒋冬梅（南京大学固体微结构物理国家重点实验室，南京 ２１０００８）｛１１３｝缺陷是在硅、锗等材料中发生于｛１１３｝面上的一种面缺陷，曾在以下硅（锗）材料中观测到：１）热退火后的...
LI Jian, JIANG Dong-Mei (State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008) {113} Defects are defects in silicon, germanium and other materials A surface defect that occurs on the {113} plane has been observed in the following silicon (germanium) materials: 1) after thermal annealing ...