Ultraviolet-infrared dual-color photodetector based on vertical GaN nanowire array and graphene

• 作 者: Chunhong Zeng Wenkui Lin Tao He Yukun Zhao Yuhua Sun Qi Cui Xuan Zhang Shulong Lu Xuemin Zhang Yameng Xu Mei Kong Baoshun Zhang
• 机 构: School of Science, Changchun University of Science and Technology, Changchun 130022, China;Suzhou In
• 出 处: 中国光学快报（英文版）
• 发表日期: 2020年11期
• 关键词: UV-IR dual-color photodetector heterojunction GaN nanowire array graphene

A monolithic integrated ultraviolet-infrared(UV-IR)dual-color photodetector based on graphene/GaN hetero-junction was fabricated by vertically integrating a GaN nanowire array on a silicon substrate with monolayer graphene.The device detects UV and IR lights by different mechanisms.The UV detection is accomplished by the forbidden band absorption of GaN,and the IR detection is realized by the free electron absorption of graphene.At peak wavelengths of 360 nm and 1540 nm,the detector has responsivities up to 6.93 A/W and 0.11 A/W,detection efficiencies of 1.23 × 1012 cm ? Hz1/2 ? W-1 and 1.88 × 1010cm ? Hz1/2 ? W-1,respectively,and a short response time of less than 3 ms.