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  5. Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth

Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth

来源 :中国科学：数学英文版 | 被引量 : 0次 | 上传用户：judehui01
【摘 要】
：
The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) onsapphire (0001) substrates was investigated by using double crystal X-ray
【作 者】
：
冯淦 郑新和 朱建军 沈晓明 张宝顺 赵德刚 孙元平 张泽洪 
【机 构】
：
StateKeyLaboratoryonIntegratedOptoelectronics
【出 处】
：
中国科学：数学英文版
【发表日期】
：
2002年11期
【关键词】
：
GaN EPITAXIAL LATERAL overgrowth crystallographic tilt double crystal X-RAY d 
【基金项目】
：
国家自然科学基金，NSFC-RGC Joint Program
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The crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth (ELO) onsapphire (0001) substrates was investigated by using double crystal X-ray diffraction (DC-XRD). Itwas found that ELO GaN stripes bent towards the SiNx mask in the direct
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