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微细图形加工技术是获得集成电路高度集成化的基本条件,其中将图形对准光刻,即所谓的直线对准器作用很大。接触曝光方法由于图形的复印精度高而且设备价廉的原因,在历来的 IC 制作上得到广泛地采用。然而,从 IC 发展到大规模集成电路,随着高度集成化和图形精度进一步的提高,就出现了许多的问题。首先是片子与掩模贴紧而产生的损伤,导致掩模的磨损及成品率下降,集成度越高,问题越大。其次的问题是对准精度不高。对准时,由于片子与掩模必须距离20微米,不能同时清楚地观察到两者,为了进行曝光贴紧时就产生横向误差。另外,由于片子凹凸不平以及灰尘的影响,要获得
Fine pattern processing technology is the basic condition for obtaining a high level of integration of integrated circuits in which the alignment of the pattern to the lithography, the so-called aligner, is of great value. The contact exposure method has been widely used in the IC manufacture for the reason that the pattern has high copying accuracy and low cost. However, with the development of integrated circuits from ICs to large-scale integrated circuits, many problems have arisen along with the further increase in high integration and graphics accuracy. The first is the damage caused by the close contact of the film with the mask, resulting in a decrease in mask wear and yield, and the higher the degree of integration, the greater the problem. The second problem is the alignment accuracy is not high. At the time of alignment, both the film and the mask must be clearly visible at a distance of 20 μm, resulting in a lateral error in the exposure process. In addition, due to the uneven film and the impact of dust, to be obtained