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用国产分子束外延设备(Ⅳ型),在低温(200—300℃)下生长了GaAs,AlGaAs和GaAs-AlGAs超晶格。本文着重提出对在低温生长GaAs缓冲层上生长优质GaAs有源层,尤其对缺陷和杂质很敏感的高电子迁移率晶体管结构材料进行研究。
The GaAs, AlGaAs and GaAs-AlGAs superlattices were grown at low temperature (200-300 ℃) by the domestic molecular beam epitaxy equipment (type Ⅳ). This article focuses on the study of growing high-quality GaAs active layers on low-temperature grown GaAs buffer layers, especially high-electron-mobility transistor materials that are sensitive to defects and impurities.